果冻影院

2024

2023

.

2022

Berens, J., Mistry, M.V., Waldh枚r, D., Shluger, A., Pobegen, G. and Grasser, T., 2022. Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs.听Microelectronics Reliability,听139, p.114789.

Kiyohara, S., Mora-Fonz, D., Shluger, A., Kumagai, Y. and Oba, F., 2022. Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics.听The Journal of Physical Chemistry C.

Tov, I.S., Mukherjee, A., Hayon, J., Hargreaves, L., Shluger, A. and Rosenwaks, Y., 2022, August. Hydrogen Induced Dipole Layer in Pd-SiO 2 Based Gas Sensors. In听2022 IEEE Sensors Applications Symposium (SAS)听(pp. 1-6). IEEE.

Durrant, T.R., El-Sayed, A.M., Gao, D.Z., Rueckes, T., Bersuker, G. and Shluger, A.L., 2022. Atomistic Modeling of the Electrical Conductivity of Single鈥怶alled Carbon Nanotube Junctions.听physica status solidi (RRL)鈥揜apid Research Letters,听16(8), p.2200118.

Strand, J., La Torraca, P., Padovani, A., Larcher, L. and Shluger, A.L., 2022. Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation.听Journal of Applied Physics,听131(23), p.234501.

Pe拧i膰, M., Padovani, A., Rollo, T., Beltrando, B., Strand, J., Agrawal, P., Shluger, A. and Larcher, L., 2022, May. Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. In听2022 IEEE International Memory Workshop (IMW)听(pp. 1-4). IEEE.

Farmer, J., Veksler, D., Tang, E., Bersuker, G., Gao, D.Z., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T., Cleveland, L. and Luan, H., 2022, March. Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. In听2022 IEEE International Reliability Physics Symposium (IRPS)听(pp. P36-1). IEEE.

Bodlos, R., Fotopoulos, V., Spitaler, J., Shluger, A.L. and Romaner, L., 2022. Energies and structures of Cu/Nb and Cu/W interfaces from density functional theory and semi-empirical calculations.听Materialia,听21, p.101362.

Kenyon, A.J., Mehonic, A., Ng, W., Zhao, L., Cox, H., Buckwell, M., Patel, K., Knights, A.P., Mannion, D.J. and Shluger, A.L., 2022, June. Defining the performance of SiO x ReRAM by engineering oxide microstructure. In听2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)听(pp. 1-4). IEEE.

Yuan, S., Kantorovich, L., Shluger, A.L. and Bevan, K.H., 2022. Atomistic insight into the formation dynamics of charged point defects: A classical molecular dynamics study of F+-centers in NaCl.听Physical Review Materials,听6(1), p.015404.

2021

Patel, K., Cottom, J., Mehonic, A., Ng, W.H., Kenyon, A.J., Bosman, M. and Shluger, A.L., 2021. The nature of column boundaries in micro-structured silicon oxide nanolayers.听APL Materials,听9(12), p.121107.

Mukherjee, A., Gnaim, M., Tov, I.S., Hargreaves, L., Hayon, J., Shluger, A. and Rosenwaks, Y., 2021. Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles.听Sensors and Actuators B: Chemical,听346, p.130509.

Wentink, M., Gaberle, J., Aghajanian, M., Mostofi, A.A., Curson, N.J., Lischner, J., Schofield, S.R., Shluger, A.L. and Kenyon, A.J., 2021. Substitutional tin acceptor states in black phosphorus.听The Journal of Physical Chemistry C,听125(41), pp.22883-22889.

Nadeem, I.M., Hargreaves, L., Harrison, G.T., Idriss, H., Shluger, A.L. and Thornton, G., 2021. Carboxylate Adsorption on Rutile TiO2 (100): Role of Coulomb Repulsion, Relaxation, and Steric Hindrance.听The Journal of Physical Chemistry C.

Izmailov, R.A., Strand, J.W., Larcher, L., O'Sullivan, B.J., Shluger, A.L. and Afanas' ev, V.V., 2021. Electron trapping in ferroelectric HfO 2.听Physical Review Materials,听5(3), p.034415.

Farmer, J., Whitehead, W., Hall, A., Veksler, D., Bersuker, G., Gao, D., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T. and Cleveland, L., 2021, March. Mitigating switching variability in carbon nanotube memristors. In听2021 IEEE International Reliability Physics Symposium (IRPS)听(pp. 1-4). IEEE.

Pe拧i膰, M., Beltrando, B., Padovani, A., Gangopadhyay, S., Kaliappan, M., Haverty, M., Villena, M.A., Piccinini, E., Bertocchi, M., Chiang, T. and Larcher, L., 2021, March. Variability sources and reliability of 3D鈥擣eFETs. In听2021 IEEE International Reliability Physics Symposium (IRPS)听(pp. 1-7). IEEE.

Mistry, M.V., Cottom, J., Patel, K., Shluger, A.L., Sosso, G.C. and Pobegen, G., 2021. Modelling the interactions and diffusion of NO in amorphous SiO2.听Modelling and Simulation in Materials Science and Engineering,听29(3), p.035008.

Hao, X., Yoko, A., Inoue, K., Xu, Y., Saito, M., Chen, C., Seong, G., Tomai, T., Takami, S., Shluger, A.L. and Xu, B., 2021. Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals.听Acta Materialia,听203, p.116473.

2020

Ohashi, N., Mora-Fonz, D., Otani, S., Ohgaki, T., Miyakawa, M. and Shluger, A., 2020. Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature.听Inorganic Chemistry,听59(24), pp.18305-18313.

Wing, D., Strand, J., Durrant, T., Shluger, A.L. and Kronik, L., 2020. Role of long-range exact exchange in polaron charge transition levels: The case of MgO.听Physical Review Materials,听4(8), p.083808.

Mora-Fonz, D., Kaviani, M. and Shluger, A.L., 2020. Disorder-induced electron and hole trapping in amorphous TiO 2.听Physical Review B,听102(5), p.054205.

Strand, J.W., Cottom, J., Larcher, L. and Shluger, A.L., 2020. Effect of electric field on defect generation and migration in HfO 2.听Physical Review B,听102(1), p.014106.

Van Der Giessen, E., Schultz, P.A., Bertin, N., Bulatov, V.V., Cai, W., Cs谩nyi, G., Foiles, S.M., Geers, M.G., Gonz谩lez, C., H眉tter, M. and Kim, W.K., 2020. Roadmap on multiscale materials modeling.听Modelling and Simulation in Materials Science and Engineering,听28(4), p.043001.

Mora-Fonz, D., Sch枚n, J.C., Prehl, J., Woodley, S.M., Catlow, C.R.A., Shluger, A.L. and Sokol, A.A., 2020. Real and virtual polymorphism of titanium selenide with robust interatomic potentials.听Journal of Materials Chemistry A,听8(28), pp.14054-14061.

Shluger, A., 2020. Defects in oxides in electronic devices.听Handbook of Materials Modeling: Applications: Current and Emerging Materials, pp.1013-1034.

Mora鈥怓onz, D. and Shluger, A.L., 2020. Modeling of intrinsic electron and hole trapping in crystalline and amorphous ZnO.听Advanced Electronic Materials,听6(1), p.1900760.

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